Electron Microscope

SOLARIS X
A Plasma FIB-SEM platform for deep sectioning and the highest resolution end-pointing for package level failure analysis

PRODUCT BROCHURE

SOLARIS X brochure

Extraordinary ultra-high resolution imaging and extremely fast micromachining. Download XEIA3 brochure!

PDF – 6.1 MB

KEY FEATURES

- TriLens™ - objective system: unique combination of three-lens objective and crossover-free beam path
- Advanced detection system with multiple SE and BSE detectors - TriSE™ and TriBE™
- Triglav™ - Ultimate ultra-high resolution at low beam energy: = 0.9 nm at 1 keV and 0.6 nm at 15 keV
- Electron beam currents up to 400 nA and rapid beam energy changes
- Optimized column geometry for accommodating large wafers up to 8” and 12”

Specification

Electron Optics
Electron Gun	High brightness Schottky emitter
Resolution
Standard mode In-Beam SE	0.6 nm at 15keV 1.2 nm at 1keV
Beam Deceleration Mode	0.9 nm at 1 keV
Magnification at 30keV	4 x - 1,000,000 x
Probe Current	2 pA to 400 nA

Xe plasma ion source FIB column for achieving the most challenging large-scale milling tasks in unbeatable short times frames

- 50x faster than Ga LMIS FIBs.
- on beam range current of 1 pA to 3 µA and resolution of < 12 nm
- Newly developed high resolution Xe plasma FIB column achieving resolution of < 12 nm for extended patterning capabilities
- Large-mass xenon ions with larger FIB current range for ultra-fast sputtering even without gas-assisted enhancement
- Significant reduction in ion implantation compared to Ga LMIS FIBs
- Rocking Stage - An effective and optimized polishing strategy against curtaining effect

Ion Optics

Ion column	i-FIB+ 1.5v
Ion Gun	Xe plasma ion source
Accelerating voltage	3kV to 30kV
Probe current	1 pA to 3 µA
Resolution (at 30 keV)	< 12 nm
Magnification Maximum Field of View	Minimum 150 × at coincidence point and 10 kV (corresponding to 1 mm field of view), maximum 1,000,000 × 1 mm
SEM-FIB angle	55°